Parameter | Symbol | Maximu m Limits | Units | Conditions |
Repetitive peak reverse voltage | V RRM | 1600 | V | |
Repetitive peak off state voltage | V DRM | 1600 | V | |
Average value of on-state current | I T(AV) | 641 | A | Sinewave,180 o conduction,T sink =70 ℃ |
Peak one cycle surge (non repetitive) current | I TSM | 9900 | A | 10.0 msec (50Hz), sinusoidal wave-shape, 180 o conduction, T j = 125 ℃ |
I RRM | 30 | mA | Tj = 125 ℃ | |
I DRM | 30 | mA | Tj = 125 ℃ | |
Peak on-state voltage | V TM | 1.5 | V | Tj = 125 ℃ ITM=1000A |
Threshold voltage | V T(TO) | 0.99 | V | T j =1 25 ℃ |
Slope resistance | r T | 0.52 | mΩ | T j =1 25 ℃ |
Average gate power dissipation | P G(AV) | 3 | W | |
Gate current | I GT | 300 | mA | V D = 6 V;R L = 3 ohms;T j = +25 ℃ |
Gate voltage | V GT | 3.5 | V | V D = 6 V;R L = 3 ohms;T j = 0-125 ℃ |
Latching current | I L | 1000 | mA | V D = 24 V; R L = 12 ohms |
Holding current | I H | 300 | mA | V D = 24 V; I = 2.5 A |
Critical rate of voltage rise | dV/dt | 1000 | V/s | VD=2/3VDRM |
Critical rate of rise of on-state current | di/dt | 200 | A/ s | Switching from V DRM 1000 V, non-repetitive |
Operating temperature | T | -30-125 | ℃ | |
Storage temperature | T stg | -30-125 | ℃ |
CASE OUTLINE AND DIMENSIONS.
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