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2800V High power thyristor for power converter

2800V High power thyristor for power converter

Payment:
l/c, t/t
Payment:
l/c, t/t
Product Information
Availability
oem, oem/odm
Supplier Info.
Registration Date: 2003
Country / Region: jiangsu / China
City: yangzhou
Main Products: power diode,rectifier diode,power transistor
Product Information
Availability
oem, oem/odm
Product Detail

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

 

IT(AV)M


 

2400


 

A

Sinewave,180o

conduction,T =85oC

c

RMS value of on-state current

ITRMSM


4120


A

Nominal value

 

 

 

Peak one cPSTCle surge

(non repetitive) current

 

 

 

 

ITSM


 

 

46

 

43


 

 

kA

 

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o  conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o  conduction, T = 125

j

oC

I square t

I2t


8.7x106


A2s

8.3 msec

Latching current

IL


200


mA

VD  = 24 V; RL= 12 ohms

Holding current

IH


75


mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


1.35


V

I      = 3000 A; T = 125 oC

TM                                     j

Threshold vlotage

VT0


0.85


V


Slope resistance

rT


0.16


m


Critical rate of rise of on-state current (5, 6)

 

di/dt


 

300


 

A/    s

Switching from VDRM     1000 V, non-repetitive

Critical rate of rise of on-state current (6)

 

di/dt


 

150


 

A/    s

 

Switching from VDRM     1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


-


W


 

Average gate power dissipation

 

PG(AV)


 

-


 

W


Peak gate current

IGM


-


A


Gate current required to trigger all units

 

IGT


 

400


 

mA

V   = 10 V;I =3A;T = +25 oC

D                         T                   j

Gate voltage required to trigger all units

 

 

VGT


 

 

2.6


 

V

 

V   = 10 V;I =3A;T = +25 oC

D                         T                   j

 

Peak negative voltage

 

VRGM


 

-


 

V


 

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd


3

-

s

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt


-

-


 

Turn-off time (with VR  = -5 V)

 

tq

 

-

 

-

 

400

 

s

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

 

Reverse recovery current

 

Irm


 

-


 

A

ITM=4000A, tp=2000us, di/dt=60A/us

 

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS                                                 

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


 

Storage temperature

 

Tstg

 

-40

 

+140


 

oC


Thermal resistance - junction to

case

 

R  (j-c)


10

20


 

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistamce - case to sink

 

R  (c-s)


2

4


 

K/kW

Double sided cooled * Single sided cooled *

Thermal resistance - junction to case

 

R  (j-s)


-

-


 

K/kW

Double sided cooled * Single sided cooled *

Mounting force

F

45

60

50

kN


Weight

W



0.9

Kg

about

* Mounting surfaces smooth, flat and greased

 

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

 

Outline


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