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High current capability FAST recovery diode 2000V

High current capability FAST recovery diode 2000V

Supplier Info.
Registration Date: 2003
Country / Region: jiangsu / China
City: yangzhou
Main Products: power diode,rectifier diode,power transistor
Product Detail


 

Forward Conduction

 

Parameters

PSTSD233N/R

Units

Conditions

IF(AV              Max. average forward current

 

@ Case temperature

250

A

180° conduction, half sine wave

60

°C

IF(RMX)           Max. RMS forward current

390

A




IFSM               Max. peak, one-cycle forward

 

non-repetitive surge current

5500

A

t = 10ms

No voltage

 

reapplied

Initial T=TJmax.

5760

A

t = 8.3ms

I2t             Maximum I2t for fusing

150000

A2s

t = 10ms

No voltage

 

reapplied

140000

A2s

t = 8.3ms

I2t          Maximum I2t for fusing

 

1500000

KA2√s

I2t for time t= I2t x t;

 

0.1 ≤ t≤ 10ms, VRRM = 0V

VFM                Maximum forward voltage drop

3.0

V

T= 25 oC, IFM = 1200 (arm)

IRRM               Max. DC reverse current

10.0

μA

T= 25 oC, per diode at VRRM

Trr

5

μs


 

 

Outlines Table

 


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