High power thyristor for phase control applications 1600V

KP4350A

  1600

  1600

  1700

Critical rate of voltage rise

dV/dt (4)

300 V/msec

Average value of on-state current

I_T(AV)

  4350

A

Sinewave,180^o conduction,T_S=70^oC

Peak one cpstcle surge

(non repetitive) current

I_TSM

48900

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

11.9x10⁶

A²s

10.0 msec

Latching current

I_L

     1000

mA

V_D = 12 V; R_L= 12 ohms

Holding current

I_H

     450

mA

V_{D =} 12 V; I = 2.5 A

Peak on-state voltage

V_TM

     1.5

V

I_TM = 6000 A; Duty cpstcle £ 0.01%

T_j = 25 ^oC

Critical rate of rise of on-state

current (5)

di/dt

      200

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

15

A

Gate current required to trigger all units

I_GT

30

300

200

125

mA

mA

mA

V_D = 12 V;R_L = 6 ohms;T_j = -40 ^oC

V_D = 12 V;R_L = 6 ohms;T_j = +25 ^oC

V_D = 12 V;R_L = 6 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.30

5

3

V

V

V

V_D = 12 V;R_L = 6 ohms;T_j = -40 ^oC

V_D = 12 V;R_L = 6 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

15

V