High power thyristors for inverter applications all diffused structure supplier
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.
Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 15 mA 70 mA (3) |
Critical rate of voltage rise | dV/dt (4) | 200 V/msec |
Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Max. average value of on-state current | IT(AV)M | 929 | A | Sinewave,180o conduction,Tc=55oC | ||
RMS value of on-state current | IT(RMS)m | 1893 | A | Nominal value | ||
Peak one cPSTCle surge (non repetitive) current |
ITSM | -
9.0 | kA
kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
I square t | I2t | 405x103 | A2s | 8.3 msec | ||
Latching current | IL | - | mA | VD = 24 V; RL= 12 ohms | ||
Holding current | IH | 1000 | mA | VD = 24 V; I = 2.5 A | ||
Peak on-state voltage | VTM | 2.04 | V | ITM = 1400 A | ||
Critical rate of rise of on-state current (5, 6) | di/dt | 1500 | A/ms | Switching from VDRM £ 1000 V, non-repetitive | ||
Critical rate of rise of on-state current (6) | di/dt | 1000 | A/ms | Switching from VDRM £ 1000 V |
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | 30 | W | |||
Average gate power dissipation | PG(AV) | 2 | W | |||
Peak gate current | IGM | - | A | |||
Gate current required to trigger all units | IGT | 300 | mA | VD = 10 V;IT=3A;Tj = +25 oC
| ||
Gate voltage required to trigger all units
| VGT | 3.0 | V
| VD = 10 V;IT=3A;Tj = +25 oC
| ||
Peak negative voltage | VRGM | 5 | V |
Dynamic
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Delay time | tgd | 1.0 | - | ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C | |
Turn-on time | tgt | 2.0 | - | |||
Turn-off time (with VR = -5 V) | tq | - | 10 | - | ms | ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/us |
Reverse recovery current | Irm | - | A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 | oC | ||
Storage temperature | Tstg | -40 | +150 | oC | ||
Thermal resistance - junction to case | RQ (j-c) | - - | K/kW | Double sided cooled Single sided cooled | ||
Thermal resistamce - case to sink | RQ (c-s) | - - | K/kW | Double sided cooled * Single sided cooled * | ||
Thermal resistance - junction to case | RQ (j-s) | 32 64 | K/kW | Double sided cooled Single sided cooled | ||
Mounting force | F | 10 | 20 | - | kN | |
Weight | W | - | Kg | about |
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