Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Average value of on-state current |
IT(AV) |
640 |
A | Sinewave,180o conduction,T =60oC c | ||
RMS value of on-state current | ITRMS | 1005 | A | Nominal value | ||
Peak one cPSTCle surge (non repetitive) current |
ITSM |
-
8.5 |
KA KA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC | ||
I square t | I2t | 0.36x106 | A2s | 8.3 msec and 10.0 msec | ||
Latching current | IL | 600 | mA | VD = 24 V; RL= 12 ohms | ||
Holding current | IH | 200 | mA | VD = 24 V; I = 2.5 A | ||
Peak on-state voltage |
VTM |
3.6 |
V | ITM = 1800 A; Duty cPSTCle 0.01%; T = 25 oC j | ||
Critical rate of rise of on-state current (5, 6) |
di/dt |
- |
A/ s | Switching from VDRM 1000 V, non-repetitive | ||
Critical rate of rise of on-state current (6) |
di/dt |
100 |
A/ s |
Switching from VDRM 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | 150 | W | tp = 40 us | ||
Average gate power dissipation |
PG(AV) |
5 |
W | |||
Peak gate current | IGM | - | A | |||
Gate current required to trigger all units |
IGT | - 300 - | mA mA mA | V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j | ||
Gate voltage required to trigger all units |
V | - 3.0 - |
V V V | V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j | ||
Peak negative voltage |
VGRM |
5 |
V |
Dynamic
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Delay time |
td |
- |
0.5 |
s | ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s | |
Turn-off time (with VR = -50 V) |
tq |
- |
600 |
s | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V; Re-applied dV/dt = 20 V/ s linear to 80% VDRM; VG = 0; T = 125 oC; Duty cPSTCle j 0.01% | |
Reverse recovery charge |
Qrr |
* |
C | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 | oC | ||
Storage temperature |
Tstg |
-40 |
+125 |
oC | ||
Thermal resistance - junction to case |
R (j-c) | 0.022 0.052 | o C/W | Double sided cooled Single sided cooled | ||
Thermal resistamce - case to sink |
R (c-s) | 0.004 0.008 | o C/W | Double sided cooled * Single sided cooled * | ||
Thermal resistamce - junction to sink |
R (j-s) | - - | o C/W | Double sided cooled * Single sided cooled * | ||
Mounting force | P | 18 | 22 | kN | ||
Weight | W | - | g |
* Mounting surfaces smooth, flat and greased
CASE OUTLINE AND DIMENSIONS
Sym | A | B | C | D | H |
mm | 75 | 47 | 66 | 3.5×3 | 26±1 |
Contact
Supplier