Manufactory High voltage Diode Module 1600V

I_T(AV)

I_F(AV)

Single phase,half wave,180° conduction, T_c = 85 °C

90

A

I_O(RMS)

Single phase,half wave,180° conduction,

190

A

I_TSM

T_j = T_jmax ; t=8.3ms

1750

A

I²t

T_j = T_jmax ; t=8.3ms

150

kA²S

V_DRM

V_RRM

V_RSM

T_j = T_jmax

1600

1600

1700

V

di/dt

I_G = 500mA, t_r = 1 μs, T_j = 25 °C

150

A/us

V_INS

A.C.1minute

3500

V

T_j

-40 ~ + 125

°C

T_stg

-40 ~ + 125

°C

W

About

-

g

I_DRM /I_RRM

AtV_DRM,Single phase,half wave; T_j = T_jmax

20

mA

V_TM

V_FM

On-State Current 300A; T_j = T_jmax

1.64

V

V_T(TO)

T_j = T_jmax

0.90

V

r_t

T_j = T_jmax

2.0

mΩ

t_gd

T_j=25°C

1

us

t_q

T_j = T_jmax

100

us

I_GT/V_GT

T_j=25°C

150/2.5

mA/V

V_GD

V_D=67%V_DRM; T_j = T_jmax

0.25

V

DV/DT

V_D=67%V_DRM

1000

V/us

I_H

T_j=25°C

250

mA

T

Mounting torque case-heatsink; ± 10%

Mounting torque busbar-terminals; ± 10%

5

3

N.m

R_th(j-c)

Per Module

0.28

K/W

R_th(c-s)

Per Module

0.32

K/W