High transition frequency BFR93A Plastic-Encapsulate Transistors
Parameter | Symbol | Min. | Typ | Max. | Unit | Conditions |
Collector-base breakdown voltage | BVCBO | 20 | - | - | V | IC=10mA |
Collector-emitter breakdown voltage | BVCEO | 11 | - | - | V | IC=1mA |
Emitter-base breakdown voltage | BVEBO | 3 | - | - | V | IE=10mA |
Collector cutoff current | ICBO | - | - | 0.5 | mA | VCB=10V |
Emitter cutoff current | IEBO | - | - | 0.5 | mA | VEB=2V |
Collector-emitter saturation voltage | VCE(sat) | - | - | 0.5 | V | IC/IB=10mA/5mA |
DC current transfer ratio | hFE | 56 | - | 120 | - | VCE/IC=10V/5mA |
Transition frequency | fT | 1.4 | 3.2 | - | GHz | VCE=10V, IE=-10mA, f=500MHz |
Output capacitance | Cob | - | 0.8 | 1.5 | pF | VCB=10V, IE=0A, f=1MHz |
Collector-base time constant | rbb`Cc | - | 4 | 12 | ps | VCB=10V, IC=10mA, f=31.8MHz |
Noise factor | NF | - | 3.5 | - | dB | VCE=6V, IC=2mA, f=500MHz,Rg=50W |
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