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Silicon power diode high peak pulse current capability 4.5V SOD-323

Silicon power diode high peak pulse current capability 4.5V SOD-323

Supplier Info.
Registration Date: 2003
Country / Region: jiangsu / China
City: yangzhou
Main Products: power diode,rectifier diode,power transistor
Product Detail


Absolute Maximum Ratings (TA=25℃, RH=45%-75%, unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Pulse Power (8/20μs)

PPK

2200

W

Peak Pulse Current (tp=8/20μs)

IPP

130

A

ESD per IEC 61000-4-2 (Air)

ESD per IEC 61000-4-2 (Contact)

 

VESD

±30

±30

 

KV

Operating temperature range

TJ

-55 to +125

Storage temperature range

TSTG

-55 to +150


Electronics Characteristics (TA=25℃, continued)

Symbol

Parameter

Conditons

Min.

Typ.

Max.

Units

VRWM

Reverse Working Voltage


-4.5


4.5

V

VBR

Reverse Breakdown Voltage

IT=1mA

4.7



V

IR

Reverse Leakage Current

VRWM=±4.5V



1.0

μA

 

 

VC

 

 

Clamping Voltage

IPP=1A, tp=8/20μs


5.8


V

IPP=20A, tp=8/20μs


6.5


V

IPP=130A, tp=8/20μs


10

17

V

CJ

Junction Capacitance

VR=0V, f=1MHz


380


pF

Electrical Characteristics


Symbol

Parameter

VRWM

Reverse Standoff Voltage

IR

Max Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

VC

Clamping Voltage @ IPP

IPP

Max Peak Pulse Current

RDYN

Dynamic Resistance

YZPST-ESD4V5S1BBA-1


Ordering Information

Device

Package

Quantity

Delivery Mode

Reel Size

YZPST-ESD4V5S1BBA

SOD-323

3000/Reel

Tape and Reel

7 inch




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