Thyristor Power Controller Inverter Grade Thyristor 800v

IT(RMS)

35

A

VDRM/RRM

200/400/600 / 800 / 1000

V

VTM

1.8

V

Storage junction temperature range

Tstg

- 40 to +150

℃

Operrating junction temperature range

Tj

- 40 to +125

℃

Repetitive Peak Off-state Voltage

Tj=25°C

VDRM

200/400/600 /

800 / 1000

V

Repetitive Peak Reverse Voltage

Tj=25°C

VRRM

200/400/600 /

800 / 1000

Non repetitive Peak Reverse Voltage

VRSM

VRRM+100

RMS on-state current (full sine wave)

TO - P3 Tc=80°C

IT(RMS)

35

A

TG - C  Tc=90°C

Non repetitive surge peak on-state current (full cycle,Tj=25°C)

f = 60 Hz t=16.7ms

ITSM

500

A

f = 50 Hz t=20ms

425

I2t Value for fusing

tp=10ms

I2t

1035

A2s

Critical rate of rise of on-state current IG=2×|GT, tr<100 ns, f =120Hz, Tj=125°C

dI/dt

150

A/ μs

Peak gate current tp=20us,Tj=125°C

IGM

3.5

A

Peak Gate Power Dissipation tp=20us,Tj=125°C

PGM

35

W

Average gate power dissipation Tj=125°C

PG(AV)

0.8

W

BW(B)

IGT

VD=12V RL=33Ω

MAX.

40

mA

VGT

MAX.

1.5

V

VGD

VD=VDRM RL=3.3KΩ Tj =125°C

MIN.

0.2

V

IL

IG=1.2IGT

MAX.

100

mA

IH

IT = 200mA

MAX

50

mA

dV/dt

VD=67%VDRM gate open Tj=125°C

MIN.

400

V/μs

Tq

IT = 1A , dV/dt = 20V/s , di/dt = — 10A/s

MAX.

35

μs

Tgt

MAX.

2

μs

VTM

l TM=6A,tp=380μs

Tj=25°C

1.80

V

I DRM

I RRM

VD=VDRM VR=VRRM

Tj=25°C

10

μA

Tj=125°C

2

mA

Rth( J- C)

Junction to Case(AC)

TO - P3

0.9

℃ / W