█ Maximum Ratings(Ta=25℃)
Parameter | Symbol | Voltage class | Unit | |
-6 | -8 | |||
Repetitive peak reverse voltage | VRRM | 600 | 800 | V |
Repetitive peak off-state voltage | VDRM | 600 | 800 | V |
RMS on-state current | IT (RMS) | 1.25 | A | |
Average on-state current | IT (AV) | 0.8 | A | |
Surge on-state current | ITSM | 22.5 | A | |
I2t for fusing | I2t | 2.5 | A2s | |
Average gate power dissipation | PG (AV) | 0.2 | W | |
Peak gate reverse voltage | VRGM | 8 | V | |
Peak gate forward current | IFGM | 1.2 | A | |
Junction temperature | Tj | – 40 to +125 | °C | |
Storage temperature | Tstg | – 40 to +150 | °C |
█ Electrical Characteristics
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test conditions |
Repetitive peak reverse current | IRRM | — | — | 0.5 | mA | Tj = 125°C, VRRM applied |
Repetitive peak off-state current | IDRM | — | — | 0.5 | mA | Tj = 125°C, VDRM applied, RGK = 1 kÙ |
On-state voltage | VTM | — | — | 1.45 | V | Ta = 25°C, ITM = 2.5A |
Gate trigger voltage | VGT | — | — | 0.8 | V | Tj = 25°C, VD = 12 V, RL = 140Ù |
Gate non-trigger voltage | VGD | 0.1 | — | — | V | Tj = 125°C, VD = VDRM,RGK = 1 kÙ |
Gate trigger current | IGT | 20 | — | 200 | μA | Tj = 25°C, VD = 12 V, RL = 140Ù |
Holding current | IH | — | — | 5 | mA | Tj = 25°C, VD = 12 V,RGK = 1 kÙ |
Thermal resistance | Rth (j-a) | — | — | 150 | °C/W | Junction to ambient |
█ Trigger Current Item
Item | A | B | C | D | E | F |
IGT (μA) | 20 to 50 | 40 to 80 | 70 to 100 | 20 to 80 | 20 to 100 | 100 to 200 |
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