Factory Thyristor semiconductor Modules 1000a 1600v

I_T(AV)

Single phase,half wave,sin 180° conduction ;T_C=85°C

1000

A

I_TRMS

Single phase,half wave,sin 180° conduction ;T_C=85°C

1484

A

I_TSM

T_j=125°C

30

kA

I²t

T_j=125°C

4300

kA²S

V_DRM/V_RRM

T_j=125°C

1600/1600

V

di/dt

non-repetitive

100

A/us

V_iso

A.C.1minute

2500

V

T_j

-40  ~  + 125

°C

T_stg

-40  ~  + 125

°C

W

About

3.6

Kg

I_DRM /I_RRM

AtV_DRM,Single phase,half wave,T_j=125°C

100

mA

V_TM

On-State Current 3000A,T_j=125°C

1.55

V

V_T(TO)

T_j=125°C

0.8

V

r_T

T_j=125°C

0.09

mΩ

R_K1G1

-

Ω

R_K2G2

-

Ω

t_gd

T_j=25°C;V_D=0.4V_DRM ; I_TM=I_TAV

-

us

t_q

dv_D/dt=50V/us;T_j=125°C; I_TM=I_TAV

-

us

I_GT/V_GT

T_j=25°C,I_T=1A,V_D=6V

200 / 3.0

mA/V

V_GD

V_D=67%V_DRM

0.2

V

DV/DT

V_D=67%V_DRM

800

V/us

I_H

T_j=25°C

300

mA

I_L

T_j=25°C

800

mA

R_th(j-c)

Thermal resistance Junction to case

0.31

°C/kW

R_th(c-h)

Thermal resistance case to heatsink

0.20

°C/kW