Products Info
Phase Control Thyristor Scr DCR604

Phase Control Thyristor Scr DCR604

Payment:
l/c, t/t
Payment:
l/c, t/t
Product Information
Availability
oem, oem/odm
Supplier Info.
Registration Date: 2003
Country / Region: jiangsu / China
City: yangzhou
Main Products: power diode,rectifier diode,power transistor
Product Information
Availability
oem, oem/odm
Product Detail

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average   value of on-state current

IT(AV)


600


A

Sinewave,180o   conduction,Tc =65oC

RMS   value of on-state current

ITRMS


940


A

Nominal   value

Peak   one cPSTCle surge

(non   repetitive) current

 

ITSM


7500

 

7200


A

 

A

8.3   msec (60Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

10.0   msec (50Hz), sinusoidal wave-

shape,   180o conduction, Tj = 125 oC

I   square t

I2t


235000


A2s

8.3   msec and 10.0 msec

Latching   current

IL


800


mA

VD   = 24 V; RL= 12 ohms

Holding   current

IH


400


mA

VD   = 24 V; I = 2.5 A

Peak   on-state voltage

VTM


2.30


V

ITM   = 2000 A; Duty cPSTCle   £   0.01%

 

Critical   rate of rise of on-state

current   (5, 6)

di/dt


400


A/ms

Switching   from VDRM £ 1000 V,

non-repetitive

Critical   rate of rise of on-state

current   (6)

di/dt


150


A/ms

Switching   from VDRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS      

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak   gate power dissipation

PGM


200


W

tp   = 40 us

Average   gate power dissipation

PG(AV)


5


W


Peak   gate current

IGM


10


A


Gate   current required to trigger all units

IGT


300

150

125


mA

mA

mA

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = +25 oC

VD   = 6 V;RL = 3 ohms;Tj = +125oC

Gate   voltage required to trigger all units

 

 

VGT

 

 

0.15

5

3

 


V

V

V

VD   = 6 V;RL = 3 ohms;Tj = -40 oC

VD   = 6 V;RL = 3 ohms;Tj = 0-125oC

VD   = Rated VDRM; RL = 1000 ohms;

Tj   = + 125 oC

Peak   negative voltage

VGRM


5


V


Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay   time

td


1.5

0.7

ms

ITM   = 50 A; VD =   Rated VDRM

Gate   pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off   time (with VR = -50 V)

tq


200

 

125

ms

ITM   = 500 A; di/dt = 25 A/ms;

VR   ³   -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM;   VG = 0;

Tj   = 125 oC; Duty cPSTCle ³ 0.01%

Reverse   recovery charge

Qrr


*


mC

ITM   = 500 A; di/dt = 25 A/ms;

VR   ³   -50 V

       * For guaranteed max. value, contact factory.                                      

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating   temperature

Tj

-40

+125


oC


Storage   temperature

Tstg

-40

+150


oC


Thermal   resistance - junction to case

RQ (j-c)

 

0.045

(1)

0.055

(2)


oC/W

Double   sided cooled *

(1)   @ 2000 lb.; (2) @ 800 lb.

Thermal   resistamce - junction to

case

RQ (j-c)

0.090

(1)

0.110

(2)


oC/W

Single   sided cooled *

(1)   @ 2000 lb.; (2) @ 800 lb.

Thermal   resistance - case to sink

RQ (c-s)


.030

.060


oC/W

Double   sided cooled *

Single   sided cooled *

Mounting   force

P

3.6

11.1


kN


Weight

W



70

g


                                                                                                                                       

OUTLINE                                      

Sym

A

B

C

D

H

mm

41

25

40

3.5×1.8

14±1


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