VDRM = Repetitive peak off state voltage
Repetitive peak off state leakage | IDRM
| 20 mA 80mA (3) |
Critical rate of voltage rise | dV/dt (4) | 700 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
Conducting - on state
Parameter | Symbol | Max. | Typ. | Units | Conditions | |
RMS value of on-state current | ITRMS | 1550 | A | Nominal value | ||
Average on-state current | IT(AV)
|
1000 |
A | Continuous single-phase,half sine wave,180°conduction | ||
Peak one cycle surge (non repetitive) current |
ITSM |
14000 |
A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
I square t | I2t | 8.2.x105 | A2s | 8.3 msec and 10.0 msec | ||
RNS reverse currrnt | IR(RMS) | 630 | A | |||
Average reverse current | IR(AV) | 400 | A | Continuous single-phase,half sine wave,180°conduction | ||
Peak on-state voltage | VTM | 2.2
| V | ITM=1000A Tj = 125 oC | ||
Peak reverse voltage | VRM | 4.0 | V | IRM=1200A, Tj = 125 oC | ||
Critical rate of rise of on-state current | di/dt | 300 | A/ms | VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125℃ | ||
Critical rate of decrease of reverse conmmutating current | (di/dt)C | 200 | A/ms | ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125℃,Saturable reactor7500v.us |
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | 30 | W | tp = 40 us | ||
Average gate power dissipation | PG(AV) | 8 | W | |||
Peak gate current | IGM | 10 | A | |||
Gate current required to trigger all units | IGT | 350
| mA
|
VD = 6 V;RL = 2 ohms;Tj = +25 oC
| ||
Gate voltage required to trigger all units
| VGT | 4
| V
| VD = 6 V;RL = 2 ohms;Tj = 25oC
| ||
Peak non- trigger voltage | VGD | 0.2 | V | Tj = 125 oC;VD=1/2VDRM |
Dynamic
Parameter | Symbol | . | Max. | Typ. | Units | Conditions |
Turn-off time | tq | 50
| ms | ITM =4000 A; di1/dt = -200A/ms; di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V Tj = 125 oC;tw=60us | ||
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 | oC | ||
Storage temperature | Tstg | -40 | +150 | oC | ||
Thyristor part thermal resistance - junction to fin | RQⅠ (j-f) | 0.022
| oC/W | Double sided cooled
| ||
Diode part thermal resistamce – junction to fin | RQⅢ (j-f) | 0.070
| oC/W | Double sided cooled
| ||
Mounting force | P | 45 | kN | |||
Weight | W | 670 | g |
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