Maximum Ratings And Characteristics
Symbol | Parameter | Values | Units | Test Conditions | |
ON-STATE | |||||
ITRMS | RMS value of on-state current | 150 | A | Nominal value | |
ITSM | Peak one cycle surge (non repetitive) current | 2000 | A
| 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | |
I2t | I square t | 16 | KA2s | 8.3 msec and 10.0 msec | |
IL | Latching current | - | mA | VD = 24 V; RL= 12 ohms | |
IH | Holding current | - | mA | VD = 24 V; I = 2.5 A | |
VTM | Peak on-state voltage | 1.65 | V | ITM = 450 A; Tj = 25 oC | |
di/dt | Critical rate of rise of on-state current | non-repetitive | - | A/ms | Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive | 10 | ||||
BLOCKING | |||||
VDRM VRRM | Repetitive peak off state voltage Repetitive peak reverse voltage | 1800 | V | ||
VDSM VRSM | Non repetitive peak off state voltage Non repetitive peak reverse voltage | 1900 | V | ||
IDRM IRRM | Repetitive peak off state current Repetitive peak reverse current | 25 | mA | Tj = 100 oC ,VRRM VDRM applied | |
dV/dt | Critical rate of voltage rise | 300 | V/ms | TJ=TJmax, linear to 80% rated VDRM | |
TRIGGEING | |||||
PG(AV) | Average gate power dissipation | 4 | W | ||
PGM | Peak gate power dissipation | 15 | W | ||
IGM | Peak gate current | - | A | ||
IGT | Gate trigger current | 150 | mA | TC = 25 oC | |
VGT | Gate trigger voltage | 3.0 | V | TC = 25 oC | |
VGD | Gate non-trigger voltage | - | V | Tj = 125 oC | |
SWITCHING | |||||
tq | Turn-off time | - | ms | ITM=550A, TJ=TJmax, di/dt=40A/μs, VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs | |
td | Delay time | - | Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC | ||
Qrr | Reverse recovery charge | - |
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