Professional High performance thyristor

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l/c, t/t

Payment:

l/c, t/t

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Availability

oem, oem/odm

Supplier Info.

Registration Date： 2003

Country / Region： jiangsu / China

City： yangzhou

Main Products： power diode,rectifier diode,power transistor

Product Information

Availability

oem, oem/odm

Product Detail


ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		200		W	tp = 40 us
Average gate power dissipation	PG(AV)		5		W
Peak gate current	IGM		10		A
Gate current required to trigger all units	IGT		300 150 125		mA mA mA	VD = 6 V;RL=3 ohms;Tj = -40 ℃ VD = 6 V;RL=3 ohms;Tj = +25 ℃ VD = 6 V;RL=3 ohms;Tj = +125 ℃
Gate voltage required to trigger all units	VGT	0.30	5 3		V V V	VD = 6 V;RL=3 ohms;Tj = -40 ℃ VD = 6 V;RL=3 ohms;Tj = 0-125 ℃ VD =Rated VDRM;RL=1000 ohms; Tj = +125 ℃
Peak negative voltage	VGRM		5		V

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