Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Max. Average value of on-state current | IT(AV)M | 3600 | A | Sinewave,180o conduction TC = 70 oC | ||
RMS value of on-state current | ITRMS | 5850 | A | Nominal value | ||
Peak one cpstcle surge (non repetitive) current | ITSM | 63 | kA | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
I square t | I2t | 19.8×103 | kA2s | |||
Latching current | IL | 500 | mA | VD = 24 V; RL= 12 ohms | ||
Holding current | IH | 125 | mA | VD = 24 V; I =2.5 A | ||
Peak on-state voltage | VTM | 1.54 | V | ITM =3000 A; Tvj=125℃ | ||
Threshold voltage | VTO | 1.03 | V | Tvj=125℃ | ||
Slope resistance | Rt | 0.16 | mΩ | Tvj=125℃ | ||
Critical rate of rise of on-state current (5, 6) | di/dt | 1000 | A/ms | Switching from VDRM £ 1500 V, non-repetitive | ||
Critical rate of rise of on-state current (6) | di/dt | 200 | A/ms | Switching from VDRM £ 1500 V |
ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | - | W | tp = 40 us | ||
Average gate power dissipation | PG(AV) | 7 | W | |||
Peak gate current | IGM | 10 | A | |||
Gate current required to trigger all units | IGT | - 400 - | mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC | ||
Gate voltage required to trigger all units | VGT | - 2.6 - | V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC | ||
Peak negative voltage | VGRM | 10 | V |
Dynamic
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Delay time | td | - | ms | ITM =50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms | ||
Turn-off time (with VR = -50 V) | tq | 700 | ms | ITM = 2000 A; di/dt = 1.5 A/ms; VR ³200 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle ³ 0.01% | ||
Reverse recovery charge | Qrr | 5200 | mAs | ITM = 2000 A; di/dt = 1.5 A/ms; VR ³200 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 | oC | ||
Storage temperature | Tstg | -40 | +140 | oC | ||
Thermal resistance - junction to case | RQ (j-c) | 5.7 11.4 | K/kW | Double sided cooled Single sided cooled | ||
Thermal resistamce - case to sink | RQ (c-s) | 1 2 | K/kW | Double sided cooled * Single sided cooled * | ||
Thermal resistance - junction to heatsink | RQ (j-s) | - - | K/kW | Double sided cooled * Single sided cooled * | ||
Mounting force | P | 81 | 108 | - | kN | |
Weight | W | - | - | 2.9 | Kg |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
Sym | A | B | C | D | H |
mm | 150 | 100 | 108 | 3.5×3 | 35±1 |
Contact
Supplier