Power transistor module dual module manufacturers

I_T(AV)

Single phase,half wave,180° conduction ;T_C=85°C

800

A

I_TRMS

Single phase,half wave,180° conduction

1372

A

I_TSM

T_j=125°C

18.9

kA

I²t

T_j=125°C

1.79×10³

kA²S

V_DRM/V_RRM

T_j=125°C

1600/1600

V

di/dt

non-repetitive

400

A/us

V_iso

A.C.1minute

3000

V

T_j

-40  ~  + 125

°C

T_stg

-40  ~  + 125

°C

W

About

2.1

Kg

I_DRM /I_RRM

AtV_DRM,Single phase,half wave,T_j=125°C

100

mA

V_TM

On-State Current 2400A,T_j=125°C

1.52

V

V_T(TO)

T_j=125°C

0.93

V

R_K1G1

-

Ω

R_K2G2

-

Ω

t_gd

T_j=25°C;V_D=0.4V_DRM;I_TM=I_TAV

2.5

us

t_q

dv_D/dt=50V/us;T_j=125°C; I_TM=I_TAV

320

us

I_GT/V_GT

T_j=25°C,I_T=1A,V_D=6V

250 / 2.5

mA/V

V_GD

V_D=67%V_DRM

0.25

V

DV/DT

V_D=67%V_DRM

1000

V/us

I_H

T_j=25°C

300

mA

I_L

T_j=25°C

-

mA

R_th(j-c)

Per Module

0.025

K/kW