Pressure assembled device high power thyristor wholesale

Average value of on-state current

I_T(AV)M

3708

A

Sine. 180^o  conduction  

T_c = 55 ^oC

RMS value of on-state current

I_TRMS

7364

A

Nominal value

Peak one cpstcle surge

(non repetitive) current

I_TSM

50

kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction,

T_j = 125 ^oC

I square t

I²t

12.5×10³

kA²s

Latching current

I_L

1500

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

1000

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2,10

V

I_TM = 4000 A; T_vj=125℃

Threshold voltage

V_T(T0)

1.473

V

T_j = 125 ^oC

On-state slope resistance

rT

0.156

Ω

T_j = 125 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

1000

A/ms

Switching from 75%V_DRM,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

500

A/ms

Switching from 75%V_DRM

Peak gate power dissipation

P_GM

50

W

t_p = 100 us

Average gate power dissipation

P_G(AV)

4

W

Peak gate current

I_GM

-

A

Gate current required to trigger all units

I_GT

-

600

-

mA

mA

mA

V_D = 5 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 5 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 5 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

-

3.0

-

V

V

V

V_D = 5 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 5 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

5

V

Delay time

t_d

-

ms

I_TM = 50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

150

-

ms

I_TM =4000 A; di/dt = 60 A/ms;

V_R ³ 100V; Re-applied dV/dt = 20 V/ms linear to 67% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cpstcle ³ 0.01%

Reverse recovery charge

Q_rr

8800

mAs

I_TM = 4000 A; di/dt = 60 A/ms;

V_R ³ 100 V

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_Q (j-c)

0.0065

-

^K /W

Double sided cooled

Single sided cooled

Thermal resistamce - case to heatsink

R_Q (c-s)

0.0130

-

^K /W

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to heatsink

R_Q (j-s)

-

-

K/kW

Double sided cooled

Single sided cooled

Mounting force

P

81

99

-

kN

Weight

W

-

-

2800

g

About

mm

142

100

110

3.5×3

36±1