Capabilty Disc Powerex Thyristor DCR804 Configuration

Average   value of on-state current

I_T(AV)

900

A

Sinewave,180^o   conduction,T_c=67^oC

RMS   value of on-state current

I_TRMS

1400

A

Nominal   value

Peak   one cPSTCle surge

(non   repetitive) current

I_TSM

13000

12000

A

A

8.3   msec (60Hz), sinusoidal wave-

shape,   180^o conduction, T_j = 125 ^oC

10.0   msec (50Hz), sinusoidal wave-

shape,   180^o conduction, T_j = 125 ^oC

I   square t

I²t

700

KA²s

8.3   msec and 10.0 msec

Latching   current

I_L

800

mA

V_D   = 24 V; R_L= 12 ohms

Holding   current

I_H

400

mA

V_{D   =} 24 V; I = 2.5 A

Peak   on-state voltage

V_TM

1.80

V

I_TM   = 2200A; Duty cPSTCle £ 0.01%

Critical   rate of rise of on-state

current   (5, 6)

di/dt

400

A/ms

Switching   from V_DRM £ 1000 V,

non-repetitive

Critical   rate of rise of on-state

current   (6)

di/dt

150

A/ms

Switching   from V_DRM £ 1000 V

Peak   gate power dissipation

P_GM

200

W

t_p   = 40 us

Average   gate power dissipation

P_G(AV)

5

W

Peak   gate current

I_GM

10

A

Gate   current required to trigger all units

I_GT

300

150

125

mA

mA

mA

V_D   = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D   = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D   = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate   voltage required to trigger all units

V_GT

0.15

5

3

V

V

V

V_D   = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D   = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D   = Rated V_DRM; R_L = 1000 ohms;

T_j   = + 125 ^oC

Peak   negative voltage

V_GRM

5

V

Delay   time

t_d

1.5

0.7

ms

I_TM   = 50 A; V_D =   Rated V_DRM

Gate   pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off   time (with V_R = -50 V)

t_q

200

125

ms

I_TM   = 500 A; di/dt = 25 A/ms;

V_R   ³   -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM;   V_G = 0;

T_j   = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse   recovery charge

Q_rr

*

mC

I_TM   = 500 A; di/dt = 25 A/ms;

V_R   ³   -50 V

Operating   temperature

T_j

-40

+125

^oC

Storage   temperature

T_stg

-40

+150

^oC

Thermal   resistance - junction to case

R_{Q (j-c)}

0.040

0.080

^oC/W

Double   sided cooled

Single   sided cooled

Thermal   resistamce - case to sink

R_{Q (c-s)}

0.015

0.030

^oC/W

Double   sided cooled *

Single   sided cooled *

Mounting   force

P

13.3

15.5

kN

Weight

W

225

g

mm

59

34

53

3.5×3

26±1