Silicon Controlled Rectifier (SCR)
ABSOLUTE MAXIMUM RATINGS
Parameter | Symbol | Value | Unit |
Storage junctiontemperature range | Tstg | -40 ~150 | ℃ |
Operating junction temperature range | Tj | -40~125 | ℃ |
Repetitive peak off-state voltage (T =25℃) | VDRM | 600 | V |
Repetitive peak reverse voltage (T =25℃) | VRRM | 600 | V |
Non repetitive surge peak Off-state voltage | VDSM | VDRM +100 | V |
Non repetitive peak reverse voltage | VRSM | VRRM +100 | V |
RMS on-state current (T =60℃) | IT(RMS) | 4.0 | A |
Non repetitive surge peak on-state current (180° conduction angle, F=50Hz) | ITSM | 30 | A |
Average on-state current (180° conduction angle) | IT(AV) | 2.5 | A |
I2t value for fusing (tp=10ms) | I2t | 4.5 | A2S |
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns) | dI/dt | 50 | A/μS |
Peak gate current | IGM | 1.2 | A |
Average gate power dissipation | PG(AV) | 0.2 | W |
ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
Symbol | Test Condition | Value | Unit | |
IGT | V =12V R =140Ω | MAX. | 200 | µA |
VGT | MAX. | 0.8 | V | |
VGD | VD=VDRM Tj=125℃ R=1KΩ | MIN. | 0.1 | V |
IL | IG=1.2IGT | MAX. | 6 | mA |
IH | IT=50mA | MAX. | 5 | mA |
dV/dt | VD=2/3VDRM Gate Open Tj=125℃ | MIN. | 15 | V/μs |
STATIC CHARACTERISTICS
Symbol | Parameter | Value(MAX.) | Unit | |
VTM | ITM =8.0A tp=380μs | Tj =25℃ | 1.8 | V |
IDRM | VD=VDRM VR=VRRM
| Tj =25℃ | 5 | μA |
IRRM | Tj =125℃ | 1 | mA | |
Thermal Resistances
Symbol | Parameter | Value(MAX.) | Unit |
Rth(j-a) | junction to ambient | 60 | ℃/W |
Rth(j-t) | Junction to tab (DC) | 20 |
Ordering information scheme
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