Repetitive peak reverse leakage and off state leakage | IRRM / IDRM
| 20 mA 150 mA (3) |
Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 mF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Average value of on-state current | IT(AV) | 3500 | A | Sinewave,180o conduction,Tc=70oC | ||
RMS value of on-state current | ITRMS | 7000 | A | Nominal value | ||
Peak one cPSTCle surge (non repetitive) current |
ITSM | 42000
38000 | A
A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
I square t | I2t | 7.5x106 | A2s | 8.3 msec | ||
Latching current | IL | 1000 | mA | VD = 24 V; RL= 12 ohms | ||
Holding current | IH | 500 | mA | VD = 24 V; I = 2.5 A | ||
Peak on-state voltage | VTM | 1.95 | V | ITM = 5000 A; Tj = 125 oC | ||
Critical rate of rise of on-state current (5, 6) | di/dt | 800 | A/ms | Switching from VDRM £ 1000 V, non-repetitive | ||
Critical rate of rise of on-state current (6) | di/dt | 300 | A/ms | Switching from VDRM £ 1000 V |
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM | 200 | W | tp = 40 us | ||
Average gate power dissipation | PG(AV) | 5 | W | |||
Peak gate current | IGM | 20 | A | |||
Gate current required to trigger all units | IGT | 300 200 125 | mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC | ||
Gate voltage required to trigger all units
| VGT |
0.30 | 5 4
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC | |
Peak negative voltage | VGRM | 20 | V |
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